2SC3303 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3303
DESCRIPTION
·High switching speed time
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation
1.0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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