2SC3298 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3298 2SC3298A 2SC3298B
DESCRIPTION
With TO-220Fa package
Complement to type
2SA1306,2SA1306A,2SA1306B
APPLICATIONS
Power amplifier applications
Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SC3298
V_CBO
Collector-base voltage 2SC3298A Open emitter
2SC3298B
2SC3298
V_CEO
Collector-emitter voltage 2SC3298A Open base
2SC3298B
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
160
180
200
160
180
200
5
1.5
0.15
20
150
-55~150
UNIT
V
V
V
A
A
W