2SC3272 Datasheet, PDF (1/3 Pages) Rohm – Triple Diffused Planar NPN Silicon Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3272
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For power amplification
PINNING（see Fig.2）
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
300
300
5
0.1
0.2
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃