2SC3263 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3263
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V_(BR)CEO= 230V(Min)
·Good Linearity of h_FE
·Complement to Type 2SA1294
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
230
V
V_CEO
Collector-Emitter Voltage
230
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
130
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn