2SC3198 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)

isc Silicon NPN Transistor
DESCRIPTION
·High DC Current Gain-hFE=70-700@IC = 2mA
·Excellent hFE Linearity
·Excellent Safe Operating Area
·Low Noise
·Complement to Type 2SA1266
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Low Frequency Amplifiers.
·Low Noise Amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
INCHANGE Semiconductor
2SC3198
VALUE
UNIT
60
V
50
V
5
V
150
mA
400
mW
125
℃
-55~125
℃
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