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| 2SC3181 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – POWER AMPLIFIER APPLICATION | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3181
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @IC= 6A
·Good Linearity of hFE
·Complement to Type 2SA1264
APPLICATIONS
·Power amplifier applications
·Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
0.8
A
80
W
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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