2SC3168 Datasheet, PDF (1/3 Pages) Shindengen Electric Mfg.Co.Ltd – High Voltage Ultra High Speed Switching Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3168
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For power switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_mb=25℃
MAX
500
400
7
20
40
7
14
200
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb}
Thermal resistance from junction to mounting base
VALUE
0.63
UNIT
℃/W