2SC3156 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 2SC3156

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
: V_CBO=900V(Min)
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2SC3156
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CP
Collector current-peak
PW≤300μs, Duty Cycle≤10%
I_B
Base current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
900
800
7
6
20
3
120
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃