2SC3150 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,800V,50W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3150
DESCRIPTION
·High Breakdown Voltage-
: V_(BR)CBO= 900V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
900
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
3
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1.5
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn