2SC3130 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3130
DESCRIPTION
·High Current-Gain Bandwidth Product
·Small Output Capacitance
APPLICATIONS
·Designed for high-frequency amplification, oscillation, mixing
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
15
V
V_CEO Collector-Emitter Voltage
10
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.15
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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