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| 2SC3127 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3127
DESCRIPTION
·Low Noise and High Gain
NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz
PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
50
mA
0.15
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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