2SC3125 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE RF AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3125
DESCRIPTION
·Good Linearity of f_T
APPLICATIONS
·Designed for TV Final Picture IF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
25
V
V_EBO Emitter-Base Voltage
4
V
I_C
Collector Current-Continuous
50
mA
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
25
mA
0.15
W
125
℃
-55~125
℃
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