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2SC3123 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE(TV VHF MIXER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3123
DESCRIPTION
·High Conversion Gain
Gce = 23dB TYP.
·Low Reverse Transfer Capacitance
Cre = 0.4pF TYP.
APPLICATIONS
·Designed for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
20
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
25
mA
0.15
W
125
â
-55~125
â
isc Websiteï¼www.iscsemi.cn
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