2SC3122 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (TV VHF RF AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3122
DESCRIPTION
·High Gain-
: G_pe= 24dB TYP. @ f= 200MHz
·Low Noise-
: NF= 2.0dB TYP. @ f= 200MHz
APPLICATIONS
·Designed for TV VHF RF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
30
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
20
mA
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
mA
0.15
W
125
℃
-55~125
℃
isc Website：www.iscsemi.cn