2SC3085 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3085
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 500V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
8
A
160
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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