2SC3060 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – Silicon High Speed Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Ultra-fast switching
·Wide area of safe operation
·High breakdown voltage
APPLICATIONS
·Switching regulators
·Motor controls
·Ultrasonic oscillators
·Class C and D amplifiers
·Deflection circuits
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2SC3060
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CP
Collector current-pulse
PW≤25μs,Duty cycle≤50%
I_B
Base current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
1200
850
7
5
8
3
150
175
-65~175
UNIT
V
V
V
A
A
A
W
℃
℃