2SC3032 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SC3032
DESCRIPTION
·Low Collector Saturation Voltage
·Low Collector-Emitter Breakdown Voltage
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1
isc & iscsemi is registered trademark