2SC2983 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2983
DESCRIPTION
·Excellent linearity of hFE
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High transistor frequency
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
1.5
A
1.0
W
TJ
Junction Temperature
Tstg
Storage Temperature Range
150
℃
-55~150
℃
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