2SC2954 Datasheet, PDF (1/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2954
DESCRIPTION
·Low Noise and High Gain
NF = 2.3 dB TYP. ; ︱S_21e︱² = 20 dB TYP.
@ f = 200 MHz
NF = 2.4 dB TYP. ; ︱S_21e︱² = 12.5 dB TYP.
@ f = 500 MHz
APPLICATIONS
·Designed for low noise wide band amplifier and buffer
amplifier of OSC, for VHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
35
V
V_CEO Collector-Emitter Voltage
18
V
V_EBO Emitter-Base Voltage
3.0
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.15
A
2
W
150
℃
-65~150
℃
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