2SC2928 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2928
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For high voltage,high speed and high
power switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
1500
800
7
5
7
2.5
80
150
-45~150
UNIT
V
V
V
A
A
A
W
℃
℃