2SC2927 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2927
DESCRIPTION
·With TO-220 package
·High collector-emitter voltage
: V_CEO=300V
·High frequency:f_T=40MHz(Min)
APPLICATIONS
·For use in line-operated color TV chroma
output circuits and sound output circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_T
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
UNIT
300
V
300
V
7
V
0.2
A
10
W
150
℃
-55~150
℃