2SC2920 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – SILICON HIFH SPEED POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2SC2920
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
450
400
7
15
150
150
-55~150
UNIT
V
V
V
A
W
℃
℃