2SC2911 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Switching Speed

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2911
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 160V(Min)
·Good Linearity of h_FE
·High Switching Speed
·Complement to Type 2SA1209
APPLICATIONS
·Designed for high-voltage switching and AF 100W predriver
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
180
V
V_CEO
Collector-Emitter Voltage
160
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
140
mA
I_CP
Collector Current-Pulse
Collector Power Dissipation
@ T_C=25℃
P_C
Collector Power Dissipation
@ T_a=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
200
mA
10
W
1
150
℃
-55~150
℃
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