2SC2908 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,100V,50W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2908
DESCRIPTION
With TO-3PN package
Low collector saturation voltage
APPLICATIONS
For use in power amplifier and
switching circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
Derate above 25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction case
VALUE
200
100
12
5.0
10
2.5
50
0.4
150
-55~150
UNIT
V
V
V
A
A
A
W
W/
MAX
2.5
UNIT
/W