2SC2898 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2898
DESCRIPTION
With TO-220C package
High voltage,high speed
High power switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_C
Collector power dissipation TC=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
500
400
7
8
16
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W