2SC2845 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SILICON NPN EPITAXIAL PLANAR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2845
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
12
V
V_EBO Emitter-Base Voltage
2.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
70
mA
0.2
W
125
℃
-55~125
℃
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