2SC2793 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2793
DESCRIPTION
·With MT-200 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·High speed and high voltage switching
·Switching regulator
·High speed DC-DC converter
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
·
Fig.1 simplified outline (MT-200) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
900
800
7
5
7
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃