2SC2787 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage
: V_CBO=800V(Min)
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·500V/5A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Product Specification
2SC3087
·
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
I_B
Base current
P_C
Collector dissipation
CONDITIONS
Open emitter
Open base
Open collector
PW≤300μs, Duty Cycle≤10%
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
800
500
7
5
10
2
50
1.75
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃