 English |
|
|
|
|
|
|
|
| 2SC2716 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH FREQUENCY AMPLIFIER APPLICATIONS | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2716
DESCRIPTION
·High Power Gain-
: Gpâ¥12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
30
V
VEBO Emitter-Base Voltage
5
V
ICM
Collector Current
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
6
A
20
W
1.7
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese