2SC2657 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2657
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
800
V
V_CEO
Collector-Emitter Voltage
500
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
1.5
A
I_CM
Collector Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
3
A
70
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn