2SC2613 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2613
DESCRIPTION
With TO-220 package
High collector breakdown voltage
: V_CEO=400V(Min)
APPLICATIONS
For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
500
400
7
5
10
2.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W