2SC2611 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2611
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For high voltage amplifier TV video
output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_C
Collector power dissipation
T_a=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
300
300
5
0.1
1.25
150
-55~150
UNIT
V
V
V
A
W
℃
℃