2SC2570A Datasheet, PDF (1/5 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2570A
DESCRIPTION
·Low Noise and High Gain
NF = 1.5 dB TYP.
Ga = 8 dB TYP. @f = 1.0 GHz, V_CE = 10 V, I_C = 5 mA
·Wide Dynamic Range
NF = 1.9 dB TYP.
Ga = 9 dB TYP. @f = 1.0 GHz, V_CE = 10 V, I_C = 15 mA
APPLICATIONS
·Designed for use in low-noise amplifier of VHF ~ UHF
stages.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
12
V
3.0
V
70
mA
0.6
W
150
℃
-65~150
℃
isc Website：www.iscsemi.cn