2SC2555 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,400V,80W)

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-3P(I) package
High collector breakdown voltage
V_CEO=400V(Min)
Excellent switching times
: t_r=1.0s(Max.) t _f=1.0s(Max.)@ I
C^=4A
APPLICATIONS
Switching regulator and high voltage
switching applications
High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SC2555
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
I_CM
Collector current-peak
I_B
Base current
T_a=25
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
500
400
7
8
10
4
2.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W