2SC2553 Datasheet, PDF (1/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
High collector breakdown voltage
: V_CEO=400V(Min)
Excellent switching time
: t_r=1.0s(Max.)
: t_f=1.0s(Max.@I _C=4A
APPLICATIONS
Switching regulator and high voltage
switching applications
High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2553
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
500
400
7
5
1
1.5
40
150
-55~150
UNIT
V
V
V
A
A
W