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| 2SC2552 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2552
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
IBB
Base Current-Continuous
Total Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
1.5
W
20
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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