2SC2528 Datasheet, PDF (1/2 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2528
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 0.7A
·Complement to Type 2SA1078
APPLICATIONS
·High frequency power amplifier,
Audio power amplifier
Dirvers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.0
A
25
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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