2SC2526 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SA1076

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2526
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V_(BR)CEO= 160V(Min)
·Good Linearity of h_FE
·Complement to Type 2SA1076
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
160
V
V_CEO
Collector-Emitter Voltage
160
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
12
A
120
W
150
℃
T_stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
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