2SC2525 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – Silicon High Speed Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2525
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1075
·Excellent safe operating area
·Ultra fast switching speed
APPLICATIONS
·Suited for high frequency power amplifiers,
audio power amplifiers,switching regulators
and DC-DC converters applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
·
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
I_C
P_C
Emitter-base voltage
Collector current
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
120
120
7
12
120
150
-65~150
UNIT
V
V
V
A
W
℃
℃