2SC2522 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2522
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V_(BR)CEO= 120V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
·Complement to Type 2SA1072
APPLICATIONS
·High frequency power amplifier
·Audio power amplifiers
·Switching regulators
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
Collector-Emitter Voltage
120
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
12
A
120
W
150
℃
-65~150
℃
isc Website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}