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| 2SC2518 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON POWER TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2518
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Low Collector Saturation Voltage
·High Speed Switching
APPLICATIONS
·Designed for switching regulator, DC-DC converter and
ultrasonic applicance applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2.5
A
40
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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