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| 2SC2507 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2507
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max.)@ IC= 10A
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulatorâs, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
500
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
20
ICM
Collector Current-Peak
40
IBB
Base Current-Continuous
7
IBM
Base Current-Peak
14
PC
Collector Power Dissipation
@ TC=25â
200
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
A
A
W
â
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.625 â/W
isc Websiteï¼www.iscsemi.cn
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