2SC2497 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-frequency power amplification)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2497 2SC2497A
DESCRIPTION
With TO-126 package
Complement to type 2SA1096/A
High collector to emitter voltage V _CEO
APPLICATIONS
For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector- emitter voltage
2SC2497
2SC2497A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_D
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
Note) *1: Without heat sink
*2: With a 100 100 2 mm A1 heat sink
VALUE
70
50
60
5
1.5
3
1.2*¹
5*²
150
-55+150
UNIT
V
V
V
A
A
W