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| 2SC2488 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SI NPN EPITAXIAL MESA | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2488
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SA1064
APPLICATIONS
·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature
12
A
100
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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