2SC2461A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2461A
DESCRIPTION
·With TO-3 Package
·Complementary to 2SA1051A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Recommended for 10W high-fidelity audio frequency amplifier
output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
IC
PC
TJ
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
5
V
15
A
150
W
150
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.833 ℃/W
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