2SC2433 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2433
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SA1043
APPLICATIONS
·Power switching applications
·High frequency power amplifier
·Switching regulators
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
10
A
150
W
175
℃
Tstg
Storage Temperature Range
-65~175
℃
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