2SC2416 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2416
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
10
A
120
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn