2SC2408 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2408
DESCRIPTION
·Low Noise
NF = 2.4 dB TYP. ;@ f = 200 MHz
·High Gain
︱S_21e︱² = 21 dB TYP. ;@ f = 200 MHz
APPLICATIONS
·Designed for use in high frequency wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
35
V
V_CEO Collector-Emitter Voltage
18
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
150
mA
0.6
W
150
℃
-65~150
℃
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