2SC2351 Datasheet, PDF (1/3 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2351
DESCRIPTION
·Low Noise
NF = 1.5 dB TYP. ; @ f = 1 GHz
·High Maximum Available Gain
MAG = 14 dB TYP. ; @ f = 1 GHz
APPLICATIONS
·Designed for use as UHF oscillators and a UHF mixer in a
tuner of a TV receiver.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
12
V
3
V
70
mA
0.25
W
150
℃
-65~150
℃
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