2SC2316 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2316
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 80(V)(Min.)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Series regulator,switch and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
6
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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